M. BOUCHAMA Idris

Prof

Directory of teachers

Department

Departement of ELECTRONICS

Research Interests

Energies renouvelables cellules solaires Physique des matériaux Les capteurs

Contact Info

University of M'Sila, Algeria

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Recent Publications

2024-12-03

Impact of Layer Thickness Variations on the Efficiency of CIGS Triple Junction Solar Cells

This paper examines the enhancement of CIGS solar cell efficiency through a comparison of four different buffer layer materials: CdS, CdxZn1-xS, ZnTe and ZnS. Additionally, a Zinc Oxide (ZnO) layer was incorporated as the transparent conductive oxide (TCO) top-layer. The investigation focused on varying buffer layer thickness from 10 nm to 100 nm to assess its impact on cell performance, with an emphasis on analyzing photovoltaic parameters using the SILVACO simulator. Our findings reveal that CdS exhibited superior performance at 100 nm thickness. As a result, the enhanced CIGS triple junction solar cell configured as Mo/p-CIGS /n-CdS/ZnO achieved a maximum power conversion efficiency (PCE) of 21.44%, an open-circuit voltage (VOC) of 0.89V, a short-circuit current density (JSC) of 27.70 mA/cm2, and a fill factor (FF) of 86.12%.
Citation

M. BOUCHAMA Idris, zouache rafik, , (2024-12-03), "Impact of Layer Thickness Variations on the Efficiency of CIGS Triple Junction Solar Cells", [international] rd International Conference on Recent Academic Studies ICRAS 2024 , Konya -Turkey

2024-11-16

Shape Optimization of Degital Model Using Matlab Tool

In additive manufacturing in contrast to subtractive manufacturing the production of simple or
complicated components requires simple tools, novel processes and control engineering. Before
starting all these technologies, it is necessary to provide a starting digital model for direct
implementing a production by adding material process. The generation of digital models of
components requires various modelling and simulation processes including the structural
optimization, which includes the size, shape and topology hierarchy. Making a component stiff for
given loading requires more material, which increases the weight of this component. Confronting this
conflict, the present research work conducts and discusses a simulation study using Matlab tool for
doing structural optimization of a surface inspired from a real product in order to perform the
optimum between the weight and material amount. The written code has only applied to 2D case of
the free-ends targeted surface without loads. This target surface is a round geometry with perforated
interior derived from a physical phenomenon consisting of a round key holder. As expected, the
ability to diminish the permissible surface area to 13~15% in a predefined (100%) space domain
allows for reducing the material amount used and thus the weight of the target may be starkly
reduce.
Citation

M. BOUCHAMA Idris, samah boudour, Hamza khemlish, Meriem messaoudi, Ouafia Belgharbi, Leila lamiri, , (2024-11-16), "Shape Optimization of Degital Model Using Matlab Tool", [international] 1st International seminar on Mechatronics Innovation, Renwables Energy and Artificial Intelligence , Tipaza Algeria

2024-10-24

Ultra-sensitivity of surface plasmon resonance sensor using halide perovskite FASnI3 and 2D materials on Cu thin films

This paper studies a novel surface plasmon resonance (SPR) biosensor using a BK7 glass prism, a copper (Cu)
metal plasmonic layer, which combine a halide perovskite (FASnI3) with two-dimensional (2D) materials such as
phosphorus black, graphene and TMDC (MoS2, MoSe2, WS2, WSe2) for the detection of breast cancer cells. We
have optimized the thickness of each layer in order to obtain maximum sensitivity. A numerical study mainly
uses the transfer matrix principle, while the attenuation total reflection method involves examining the reflection
properties. The evaluation of SPR biosensor configurations serves to obtain optimal performance. The simulation
results indicate that the integration of halide perovskite (FASnI3) and 2D materials into the BK7/Cu/medium
sensing structure significantly improves the sensitivity and figure of merit (ZT). The outstanding results in terms
of sensor performance characteristics are observed in the BK7/Cu (48 nm)/FASnI3 (5 nm)/BP (0.53 nm)
configuration. The figure of merit and sensitivity estimated at 123.11 RIU 1 and 459.28◦/RIU, with a notable
improvement of 338.45 %
Citation

M. BOUCHAMA Idris, H. Bouandas, Y. Slimani, A. Bakhouche, N. Bioud, A. Djemli, Faisal Katib Alanazi, M.A. Ghebouli, Chihi Tayeb, , (2024-10-24), "Ultra-sensitivity of surface plasmon resonance sensor using halide perovskite FASnI3 and 2D materials on Cu thin films", [national] Results in physics , Elsevier

2024-07-05

Investigation of zinc oxide doped microstructures with cobalt via electrochemical deposition

The present paper reports electrochemical elaboration of zinc oxide microstructure doped with cobalt (CZO) at
various [Co2+]/[Zn2+] (Co/Zn) concentration ratios onto ITO substrates at a pH of 6.5. All Mott-Schottky plots of
electrochemical analysis showed that all electrodeposited CZO samples exhibited n-type semiconducting be-
haviours. XRD spectra revealed that all electrodeposited CZO samples crystallized in the typical hexagonal
wurtzite structure with a preferential orientation along the (100) plane with descending crystalline size versus
increasing cobalt dopants amount. Reviewing SEM images, notable changes were found on granular morphol-
ogies of CZO samples because of doping changing. EDX showed proportionality between the increase of final Co/
Zn ratio in the CZO samples and the increase of starting Co/Zn concentration ratio within the initial depositing
solutions. UV–Vis measurements indicated that transmittances of most CZO samples were above 80 % in the
visible range and their optical band gaps were high and limited between 3.60 and 3.64 eV
Citation

M. BOUCHAMA Idris, (2024-07-05), "Investigation of zinc oxide doped microstructures with cobalt via electrochemical deposition", [national] Physica B: Condensed Matter , Elsevier

2024-05-12

mpact of Various Buffer Layers on CdTe Solar Cells Performance Using SCAPS-1D Simulator

Abstract—This paper examines the enhancement of CdTe
solar cell efficiency through a comparison of four different
buffer layer materials: CdS, CdxZn1-xS, ZnTe and ZnS.
Additionally, a Zinc Oxide (ZnO) layer was incorporated as
the transparent conductive oxide (TCO) top-layer. The
investigation focused on varying buffer layer thickness from 10
nm to 100 nm to assess its impact on cell performance, with an
emphasis on analyzing photovoltaic parameters using the
SCAPS-1D simulator. Our findings reveal that CdS exhibited
superior performance at 100 nm thickness. As a result, the
enhanced CdTe solar cell configured as Mo/p-CdTe/n-
CdS/ZnO achieved a maximum power conversion efficiency
(PCE) of 21.44%, an open-circuit voltage (VOC) of 0.89V, a
short-circuit current density (JSC) of 27.70 mA/cm2, and a fill
factor (FF) of 86.12%.
Citation

M. BOUCHAMA Idris, Merabet serra, Bendenia Chahrazed, Bendenia Souhila, Dib Hanae, Moulbhar Samia, Khantar Sid ahmed, , (2024-05-12), "mpact of Various Buffer Layers on CdTe Solar Cells Performance Using SCAPS-1D Simulator", [international] IEEE 2nd International Conference en Electrical Engineering and Automatic Control ICEEAC 2024 , SETIF Algeria

2024-02-28

CGS/CIGS single and triple-junction thin film solar cell: Optimization of CGS/CIGS solar cell at current matching point

The simulations have been carried out to study and investigate the performance of the photo-
voltaic J-V characteristics of triple-junction solar cells based on Cu(In,Ga)Se2 absorbers using 2D
Silvaco/Atlas simulator. The triple-junction configuration was considered as a single layer of CGS
on top while the CIGS single layer was separated for middle and bottom cells. The investigations
for CIGS solar cell presented in this article are in close agreement with the already observed
numerical and experimental data. The photovoltaic J-V characteristics for the proposed CGS/
CIGS triple-junction solar cell, such as the short-circuit current density, open-circuit voltage, fill
factor and power conversion efficiency have been investigated and observed to be 13.49 mA/
cm2, 2.64 V, 86.56% and 30.85%, respectively. The proposed configuration offers improved
conversion efficiency up to 33.27% at current matching point. The entire inquiry on CIGS solar
cells yields a prospective idea for single and triple-junction solar cells with high efficiency.
Citation

M. BOUCHAMA Idris, (2024-02-28), "CGS/CIGS single and triple-junction thin film solar cell: Optimization of CGS/CIGS solar cell at current matching point", [national] Micro and Nanostructures , Elsevier

2023-11-22

Enhancing Efficiency In CIGS solar cell through numerical analysis by inserted uc-Si:H BSF layer

This study demonstrates the utility of SILVACO/Atlas in modeling CIGS solar cells to optimize design and fabrication parameters, such as layer thicknesses, doping concentrations, and material defects. By analyzing different designs and configurations, we can identify the most efficient and cost-effective solar cell structures.
Our calculations specifically focused on three heterojunction solar cell structures (substrate, tandem and triple-junction), and we used 2D SILVACO/Atlas simulator to analyze their performance under various conditions. By varying factors such as thicknesses, carrier concentration, defect density and operating temperature, we were able to extract photovoltaic parameters and investigate the impact on the overall performance of the cells. The use of SILVACO/Atlas in our research highlights its powerful role in the development of high-performance solar energy technologies.
Citation

M. BOUCHAMA Idris, Rafik Zouache, Saidani Okba, Elyazid Zaidi, Abderahim Yousfi, Zitouni Messai, , (2023-11-22), "Enhancing Efficiency In CIGS solar cell through numerical analysis by inserted uc-Si:H BSF layer", [international] 1st edition of International conference on Electrics Engineering and Telecommunications (2ETA-2023) , Bordj Bou-Arreridj University

2023-11-08

Structural, elastic, mechanical and optoelectronic properties of zinc-doped SrTiO3 perovskite compounds

Structural, elastic, mechanical and electronic properties of pure and zinc-doped SrTiO3 at the
concentration in the range (1–10%) are studied by ¯rst-principles calculations. The structural
parameters of synthesized compounds agree well with the standard data depicting the growth of
stable compounds. A slight obvious increase in the lattice constant of 3.9245 Å is observed in Zndoped SrTiO3 due to the deviation of the atomic radii of Zn and Ti. Elastic constants and
mechanical parameters of SrTiO3 are closer to their available theoretical and experimental data.
The investigated compounds exhibit brittle behavior for all Zn ratios. The doping zinc
concentration reduces the indirect band gap value. The doping concentration 2%, gives a band
gap value closer to the experimental one. The band gap of pure SrTiO3 is 1.827 eV and after
doping with Zn for concentration from 1% to 10%, the optimized values are 1.970, 1.886, 1.802,
1.718, 1.635, 1.552, 1.470, 1.389, 1.310, 1.231 and 1.154 eV.
Citation

M. BOUCHAMA Idris, faiza BENLAKHDAR, Mohamed amine Ghebouli, zohra zerrogui, karim Boufrach, Brahim Ghebouli, Tayeb Chihi, Soltan alomairi, , (2023-11-08), "Structural, elastic, mechanical and optoelectronic properties of zinc-doped SrTiO3 perovskite compounds", [national] Modern Physics Letters B , World Scientific

2023-10-10

Comprehensive investigation of ZnS: Structural properties, Elastic constants and their crucial role in environmental protection and clean energy production

Zinc monochalcogenides, specifically ZnS serve as exemplary representatives of II-VI semiconductors and have the ability to adopt either zinc-blende (ZnX-z) or wurtzite (ZnX-w) crystal structures. Notably, ZnX-z phases exhibit optical isotropy, while ZnX-w phases display anisotropy, with the c-axis serving as the polar axis. ZnS featuring a wide direct band gap of approximately 3.37 eV at room temperature, emerges as a quintessential semiconductor employed extensively in optoelectronic applications. Furthermore, ZnS exhibits transparency within the visible light spectrum and possesses the added advantage of environmental friendliness, attributed to the abundant presence of zinc in the Earth's crust. Among the family of IIB-VIA compounds, namely ZnS, this material crystallizes in the cubic zinc-blende structure under ambient pressure, boasting direct energy band gaps. Notably, these wide band-gap semiconductors are of paramount interest due to their capability to emit light even at room temperature.
Utilizing computational tools such as CASTEP offers a robust means for designing and enhancing these materials, facilitating the development of advanced optoelectronic devices. In this study, we delved into the electronic structure and optical characteristics of ZnS systems, employing first principles through the ultra-smooth pseudopotential approach of density functional theory and the generalized gradient approximation method implemented with CASTEP. Our investigation yielded the following findings: The network parameters exhibited varying values, making it feasible to deposit these materials on different substrates. The binary alloy holds particular interest due to its wide bandgap 2.698 eV for ZnS. The results obtained for the structural, physical, and optical properties closely align with existing theoretical and experimental data, affirming the accuracy of our calculation methodology. The properties of pure ZnS materials suggest significant potential for use in solar cells.
Citation

M. BOUCHAMA Idris, benlakhdar faiza, Tayeb chihi, Mohamed Amine Ghebouli, Ibrahim Ghebouli, , (2023-10-10), "Comprehensive investigation of ZnS: Structural properties, Elastic constants and their crucial role in environmental protection and clean energy production", [international] The second International conference of nanotechnology for environmental protection and clean energy production ICNEP-2023 , Freres Mentouri University - Constantine I

2023-09-26

Comprehensive Investigation of Structural and Electronic Properties of Sulfur-Doped Zinc Oxide using CASTEP Program

This study used the DFT method to investigate the structure, electronic and optoelectronic properties of ZnS1-xOx system. The anisotropic optical parameters, the band gap range from 2.5 eV to 3.6 eV and absorption of extreme ultraviolet light make ZnS1-xOx alloy as windows, lenses and absorber material. The refractive index is more important when photons move through the material and when bonds between atoms are covalent. The static refractive index decreases from 2.1 to 1.5 when the oxygen content x passes from 0 to 1. The in-plane and out-of-plane extinction coefficient start at energy identical of that corresponding to the direct band gap value of ZnS1-xOx alloy.
ZnS1-xOx absorb ultraviolet light in the range 4 eV to 10 eV and the band gap validate its candidature for optical and photovoltaic devices. The similar profile of Zn d and O p throughout the whole energy region indicates the presence of hybridization between their electrons and a covalent bonding between them. The absorption coefficient of ZnS1-xOx system is in the range of 105 cm-1, which is a characteristic property of a good absorber material.
Citation

M. BOUCHAMA Idris, benlakhdar faiza, , (2023-09-26), "Comprehensive Investigation of Structural and Electronic Properties of Sulfur-Doped Zinc Oxide using CASTEP Program", [international] 3rd International Conference on Innovative Academic Studies , Konya/Turkey

2023-07-10

Advancing the Properties of CuInX-1GaXS2 Compounds using the CASTEP Program: A Computational Exploration of Structural, Electronic, and Optical Characteristics

This work presents a comprehensive study on the effects of Galium doping in the CuInS2 compound highlights substantial improvements in its structural, mechanical, electronic, and optical properties. The observed increases in the elastic constants (B, G, and Y) indicate enhanced mechanical strength and stability, making the doped material more resilient. Additionally, the augmentation in the energy gap and absorbance demonstrates a favorable modification in the electronic band structure, leading to higher light absorption capabilities. Moreover, the rise in the dielectric constant signifies enhanced electrical response and polarization behavior, offering potential advantages in electronic applications. The overall findings of this study indicate that aluminum doping is a promising strategy to tailor and optimize the properties of CIGS, making it an attractive candidate for a wide range of advanced technological devices and applications.
Citation

M. BOUCHAMA Idris, Benlakhdar faiza, Tayab Chihi, Brahim ghebouli, zohra zerrougui, , (2023-07-10), "Advancing the Properties of CuInX-1GaXS2 Compounds using the CASTEP Program: A Computational Exploration of Structural, Electronic, and Optical Characteristics", [international] 5th International Conference on Applied Engineering and Natural Sciences , Konya/Turkey

2023-07-06

AB-INITIO STUDY OF STRUCTURAL, ELECTRONIC AND OPTICAL PROPERTIES OF ZnX (X = Te, S and O): APPLICATION TO PHOTOVOLTAIC SOLAR CELLS†

The purpose of this research is to investigate the structural, electronic, and optical properties of ZnX compounds, particularly those with
X = Te, S, and O, which have direct bandgaps that make them optically active. To gain a better understanding of these compounds and
their related properties, we conducted detailed calculations using density functional theory (DFT) and the CASTEP program, which uses
the generalized gradient approximation (GGA) to estimate the cross-correlation function. Our results for lattice modulus, energy bandgap,
and optical parameters are consistent with both experimental data and theoretical predictions. The energy bandgap for all compounds is
relatively large due to an increase in s-states in the valence band. Our findings suggest that the optical transition between (O - S - Te) - p
states in the highest valence band and (Zn - S - O) - s states in the lowest conduction band is shifted to the lower energy band. Therefore,
ZnX compounds (X = Te, S and O) are a promising option for optoelectronic device applications, such as solar cell materials.
Citation

M. BOUCHAMA Idris, Faiza Benlakhdar, Tayeb chihi, Brahim ghebouli, mohamed amine ghebouli, zohra zerroughi, khettab khatir, mohamed alam said, , (2023-07-06), "AB-INITIO STUDY OF STRUCTURAL, ELECTRONIC AND OPTICAL PROPERTIES OF ZnX (X = Te, S and O): APPLICATION TO PHOTOVOLTAIC SOLAR CELLS†", [national] EAST EUROPEAN JOURNAL OF PHYSICS , EAST EUROPEAN JOURNAL OF PHYSICS

2023-07-03

Dispositif multi-capteurs pour réduire les risques domotiques

Un détecteur de danger domotique multi-capteurs est un système qui utilise un ensemble de capteurs pour détecter une variété de dangers et d'incidents dans la maison. Cet appareil est conçu pour assurer la protection et la sécurité des personnes et des biens.
Le dispositif multi-capteurs pour les dangers domestiques comprend une variété de capteurs tels que : des détecteurs de fumée, d'humidité, de chaleur, de fuite de gaz et des détecteurs de mouvement. Cet appareil surveille la maison en permanence et détecte tout changement anormal dans l'environnement domestique.
Lorsque les capteurs se déclenchent et détectent un danger, l'appareil envoie des signaux d'avertissement immédiats aux personnes concernées, que ce soit en envoyant des messages textes, en déclenchant les LED, et même via une alarme intégrée à l'appareil lui-même.
Grâce à la technologie avancée des capteurs et à la connectivité sans fil, les particuliers peuvent surveiller l'état de leurs maisons et de leurs propriétés de n'importe où et à tout moment, offrant une tranquillité d'esprit et une assurance de sécurité.
Mots clés : Arduino UNO , Domotique , Détecteur des risques, les capteurs.
Citation

M. BOUCHAMA Idris, (2023-07-03), "Dispositif multi-capteurs pour réduire les risques domotiques", [national] University of Msila

2023-02-21

Optimization of waveguide parameters for minimization of the sensitivity temperature dependence for the SiO2:TiO2 planar waveguide optical sensor

This study focuses on investigating how changes in temperature afect the sensitivities of
an optical sensor that uses a SiO2:TiO2 planar waveguide, with particular emphasis on
the fundamental modes sensitivities. The results showed that, by accurately determining
the appropriate core thickness for each set of physical parameters of the waveguide, we
not only increased the sensitivity, but also extended its stabilization range with respect
to the temperature. The best results, in terms of values and stabilities of the sensitivities
were obtained for a high refractive index of the core and selecting a measurand refractive
index closest to that of substrate. As regards the geometrical parameters, the most favorable results can be attained for the core thicknesses located between the thickness corresponding to the maximum sensitivity at room temperature and the cut-of thickness of the
TM0 mode, the sensitivity remain relatively stable at the vicinity of 0.41. However, for
the monomode structure, the best results can be achieved for the core thicknesses situated
between the thickness corresponding to the maximum sensitivity at room temperature and
twice the cut-of thickness of the TE0 single mode, the average sensitivity is relatively constant at around 0.35.
Citation

M. BOUCHAMA Idris, · Salim Benaissa, · Abdelhalim Bencheikh, Abdelbaki Cherouana, , (2023-02-21), "Optimization of waveguide parameters for minimization of the sensitivity temperature dependence for the SiO2:TiO2 planar waveguide optical sensor", [national] Optical and Quantum Electronics , Springer

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