M. KEBAILI Farida

MCA

Directory of teachers

Department

Departement of ELECTRONICS

Research Interests

cristaux photonique

Contact Info

University of M'Sila, Algeria

Email : farida.kebaili@univ-msila.dz

On the Web:

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Recent Publications

2024-11-17

Proposed Simulation Models for Comparative Analysis of WDM-PON and CWDM-PON Systems

Les réseaux optiques passifs (PON) à multiplexage en longueur d’onde (WDM-PON) et à multiplexage par répartition en longueur d’onde grossière (CWDM-PON) sont deux technologies clés pour les réseaux d’accès à haut débit. Cet article propose des modèles de simulation permettant une analyse comparative de ces deux architectures en termes de performances, de capacité et d’efficacité spectrale.

L’étude explore les différences entre le WDM-PON, qui offre une meilleure efficacité spectrale et une capacité évolutive grâce à un multiplexage dense, et le CWDM-PON, qui se distingue par une mise en œuvre plus économique et une gestion simplifiée des longueurs d’onde. Les simulations évaluent plusieurs paramètres, notamment le rapport signal/bruit optique (OSNR), le débit de transmission et la portée du signal.

Les résultats montrent que le WDM-PON assure une meilleure qualité de service et une évolutivité supérieure, tandis que le CWDM-PON constitue une alternative plus rentable pour des applications nécessitant une infrastructure moins complexe. Cette analyse comparative permet ainsi d’orienter le choix technologique en fonction des besoins spécifiques des opérateurs et des utilisateurs finaux.
Citation

M. KEBAILI Farida, EL MANSOURI Oualida, , (2024-11-17), "Proposed Simulation Models for Comparative Analysis of WDM-PON and CWDM-PON Systems", [national] National Conference of Applied Sciences and Engineering NCASE’24 , Organized by the Applied Sciences Laboratory (LSA) of the National Higher School of Advanced Technologies (ENSTA). ALGER

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2024-10-25

Designing a high sensitive RI Photonic Crystal Sensor

The photonic crystal sensor for Resonance Impedance (RI) detection represents a major advancement in the field of analytical detection, offering exceptional sensitivity that finds crucial applications in various sectors. This high sensitivity enables precise and reliable detection of minute concentrations of chemical or biological substances, which is critical for diverse fields such as medicine, pharmaceuticals, and food safety.
The major advantage of this technology lies in its ability to detect minute variations in refractive index on a nanoscale. By exploiting the principle of total internal resonance, this sensor can identify these changes with great precision. Consequently, it offers an extensive detection range, making it versatile and adaptable to different environments and usage conditions. This high sensitivity also enables early detection and continuous monitoring, thereby enhancing the ability to meet medical and environmental requirements.
The proposed article extensively explores the development of a highly sensitive RI photonic crystal sensor. By emphasizing the use of total internal resonance, this work presents the significant advantages of this approach over existing technologies. In addition to its increased sensitivity, this sensor offers the possibility of miniaturization and integration into sensor networks, thereby paving the way for extensive applications ranging from environmental monitoring to medical diagnosis. In summary, this research represents a significant advancement in the field of analytical detection, opening up new possibilities for science and technology.
Citation

M. KEBAILI Farida, (2024-10-25), "Designing a high sensitive RI Photonic Crystal Sensor", [international] 11TH International Conference on Computational and Eexperimental Science and Engineering (ICCESEN2024) , turquie

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2024-01-02

Modeling and Simulation of Photonic Crystal Sensor for Drinking Water Quality Monitoring.

Photonics crystal sensors, sensitive to light, play a crucial role in discerning minute alterations in a material’s refractive index, finding widespread application, such as in monitoring drinking water quality. Our objective is to fashion a sensor based on a 2D photonics crystal structure and scrutinize optical transformations induced by variations in the bacteria’s refractive index as light traverses the sensor structure. Leveraging Rsoft’s simulation capabilities, we assessed transmission spectra, observing shifts in the bacteria’s refractive index and their consequential impact on the light signal’s frequency and wavelength within the sensor structure. The simulations unequivocally demonstrate that fluctuations in the bacteria’s refractive index significantly affect the light signal’s frequency and wavelength. Consequently, the study underscores the efficacy of the Rsoft-designed optical sensor in discerning bacterial presence in contaminated water, achieving an average sensitivity of 834.344 nm/RIU. In conclusion, the study establishes the success of the optical sensor crafted with Rsoft software in detecting bacteria in polluted water. By monitoring optical alterations during light traversal, variations in the bacteria’s refractive index are translated into discernible shifts in the light signal’s frequency and wavelength, facilitating effective bacteria detection.
Citation

M. KEBAILI Farida, (2024-01-02), "Modeling and Simulation of Photonic Crystal Sensor for Drinking Water Quality Monitoring.", [national] Progress in Electromagnetics Research C , The Electromagnetic Academy (USA)

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2023-10-15

Réalisation d’une serre agricole intelligente

Dans le cadre d'un mémoire de fin d'études en master, un système a été
conçu et réalisé dans le but d'automatiser et de contrôler à distance les serres
agricoles. L'objectif principal était de réduire la charge de travail des
agriculteurs et d'améliorer la qualité et la quantité des récoltes.
Le projet se compose de trois parties distinctes :
Dans la première partie, un système intelligent a été conçu pour détecter
les conditions climatiques dans la serre à partir des données collectées par des
capteurs. Il peut également décider de déclencher des actionneurs afin de
maintenir les conditions climatiques optimales pour les plantes.
La deuxième partie a été consacrée au développement d'une interface
homme-machine pour visualiser en temps réel les paramètres climatiques et
configurer les seuils des conditions climatiques à ne pas dépasser dans la
serre.
Enfin, un prototype de serre a été réalisé pour tester les performances et la
fonctionnalité du système.
Citation

M. KEBAILI Farida, (2023-10-15), "Réalisation d’une serre agricole intelligente", [national] m'sila university

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2022-08-02

Système de surveillance des conditions climatiques dans le poulailler.

Les facteurs environnementaux dans les poulaillers, en particulier la poussière
respirable et les concentrations élevées de gaz de salle nocifs, peuvent être
corrélées à une augmentation de la mortalité et à des performances réduites et
par conséquence sur la rentabilité dans la filière avicole. Donc, L'automatisation
de l'environnement de la volaille qui est étroitement liée à l'équipement
d'élevage est nécessaire. Dans ce contexte, notre contribution consiste à
développer un système électronique pour le contrôle des bâtiments d’élevage en
vue d’avoir une ferme intelligente et autonome à basse consommation avec la
possibilité de gestion à distance. Cette amélioration de l’efficacité technique va
assurer une excellente production quantitative et qualitative. Aussi, nous avons
conçu une interface graphique en utilisons le logicielle LabView afin de mieux
visualiser le bon déroulement du système réalisé.
Citation

M. KEBAILI Farida, (2022-08-02), "Système de surveillance des conditions climatiques dans le poulailler.", [national] Université Mohamed Boudiaf M'sila

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2022-05-06

A soft sensor of stator winding temperature prediction for PMSMs based on extreme learning machine

Permanent magnet synchronous motor
(PMSM) plays an effective role in electric vehicle
applications. Monitoring PMSM's temperature in realtime is critical to its safety and reliability. The traditional
method of PMSM temperature monitoring is to install
temperature sensors into the motor, and it is a very
expensive method. Currently, the lumped-parameter
thermal networks (LPTNs) are the appropriate
alternative for determining PMSM components'
temperatures. However, they lack physical
interpretability once the degrees of freedom are reduced
in order to meet real-time requirements. The approach
based on soft sensors is an efficient and economical way to
solve such problems. In this paper, a soft sensor is
developed to predict the stator winding temperature using
an extreme learning machine (ELM). Furthermore, the
Principal Component Analysis (PCA) technique is used to
select effective and relevant variables. The performance of
the model is evaluated based on five statistical indicators:
the correlation coefficient (R2
), the root relative squared
error (RRSE), the mean square error (MSE), the mean
absolute error (MAE), and the root-mean-squared error
(RMSE). The results showed that the PCA-ELM model
has a high efficiency to predict the stator winding
temperature with RMSE = 0.0622, MAE = 0.0480, MSE =
0.0039, RRSE = 6.73% and R2
= 0.9955. Moreover, it has
low computational complexity. Due to its low
computational complexity and high performance, this
application could have a direct influence and economic
savings on the development and design of PMSMs
temperature monitoring systems.
Citation

M. KEBAILI Farida, (2022-05-06), "A soft sensor of stator winding temperature prediction for PMSMs based on extreme learning machine", [international] 19th IEEE International MultiConference on Systems, Signals & Devices SSD'2022 , SETIF - Algeria

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2019

Modelling and Simulation of the Carbon Nanotubes FETs

The development or improvement of new channels of field effect transistor can’t be considered without the support of physical modeling that allows the predetermination of characteristics and structural optimization. Therefore we were interested in the sum of our study to the modeling of field effect transistor especially CNTFETs. In this work, we present the different steps of implementation of the equations of our model based on solving one dimensional and two dimensional using Fermi Dirac approximation, to determine the charge density and thus the resistance of the carbon nanotubes, and we deduce the drain current of CNTFET. A simulation of a coaxially Gated CNTFET is Carried out based on the expressions of the equations provided previously. The results obtained are presented, interpreted and compared by those obtained by Monte Carlo simulation.
Citation

M. KEBAILI Farida, (2019), "Modelling and Simulation of the Carbon Nanotubes FETs", [international] International Conference on Chemical Physics and Materials Science , Istanbul, Turkey

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2017

Study and Simulation of the InGaAsP-InP Laser Diode

The objective of this work is the study of laser diodes based on III-V semiconductor, more particularly laser diode (InGaAsP-InP). The detailed study of a one-dimensional model, which is limited to the stationary regime of the laser diode was presented. Simulation by the software Matlab of the studied model, made it possible to clarify the influence of some parameters on the electrical and optical characteristics of the studied laser diode.
Citation

M. KEBAILI Farida, (2017), "Study and Simulation of the InGaAsP-InP Laser Diode", [international] The 6th Abu Dhabi University Annual International Conference: Mathematical Sciences and It’s Application , Abu Dhabi

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2016-05-17

Dispositifs à Semi-conducteurs

Préface :
Ce cours ; dispositifs à semi-ĐoŶduĐteuƌs s’adƌesse aux étudiaŶts de Master1, option
microélectronique, et aux étudiants de Master 1 Microondes.
L’oďjeĐtif de Đe Đouƌs est d’aďoƌdeƌ les dispositifs éleĐtƌoŶiƋues à seŵi-conducteurs afin de
comprendre les bases du fonctionnement de ces composants qui constituent les briques des
circuits intégrés ou des cartes utilisés pratiquement dans tous les systèmes électroniques
d’aujouƌd’hui , et se familiariser avec certaines applications importantes en électronique.
Les étudiants seront capables de :
 CoŵpƌeŶdƌe et d’expliƋueƌ la foƌŵatioŶ et l’appliĐatioŶ de la joŶĐtioŶ PN.
 Construire et analyser les circuits de diodes.
 comprendre la façon dont un transistor bipolaire à jonction PN fonctionne.
 Construire et analyser des circuits de base de transistor Bipolaire en différentes
configuration (EC, BC et CC).
 Comprendre le fonctionnement d’un transistor à effet de champ ( JFET et MOS).
Des exercices sont proposés à la fin pour chaque chapitre aurai permettaŶt à l’étudiaŶt de
contrôler et de consolider ses acquisitions.
Citation

M. KEBAILI Farida, (2016-05-17), "Dispositifs à Semi-conducteurs", [national] m'sila university

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2014-12-21

Modelisation of photocourant in organic solar cell using Phthalocyanine/Perylene

n this paper, we report on investigation uses a method of calculation the photocurrent delivered by the organic solar
cell double-layer MPP/ZnPc applying the equations of continuities and the currents by analogy to the phenomena of loads
transport according to the model of an heterojunction n/p. The principal generation of the photocurrent is localized in the
active zone, a very fine area by contribution with the thicknesses of the donor and acceptor layers. Thus let us that the
excitons dissociate only in the MPP/ZnPc interface, whereas the zone of absorption is considerably larger than the
diffusion length.
The principal photovoltaic parameters of this structure are calculated by the simulation of equation I(V), under
illumination AM1. 5. Insertion of the composite layer C60 and ZnPc in the interface of MPP and ZnPc makes it possible
to improve the performances of the cell by an increase in the photocurrent of the value 2.6 mA/cm 2 to 5.3 mA/cm 2 and
the conversion efficiency η
from 0,72% to 1,49%.
We worked out a numerical model based on resolution of equations of continuities who gave results in good
accordance with literature and which allowed, moreover a better control of performances of organic cells, for their improvement
Citation

M. KEBAILI Farida, (2014-12-21), "Modelisation of photocourant in organic solar cell using Phthalocyanine/Perylene", [national] Journal of New Technology and Materials JNTM. Classe: B , OBE UNIV

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2009

Temperature dependent on submicron Gallium Arsenide Metal Semiconductor Field Effect Transistor

Abstract - GaAs metal semiconductor field effect transistors are widely used for microwave and digital applications because of their superior high frequency characteristics. A variety of models used to simulate the GaAs MESFET characteristics, it has been observed that the drain current and small signal parameters of the GaAs field effect transistor, for instance transconductance and output conductance are sensitive to the temperature, and there for it is important to take in to account the effect of temperature on these parameters. Using a recent model , we have investigated the effect of the temperature on the I-V characteristics and small signal parameters. Our results show that the drain current and the transconductance decreases with increasing the temperature which are in excellent agreement with the published experimental results.
Citation

M. KEBAILI Farida, (2009), "Temperature dependent on submicron Gallium Arsenide Metal Semiconductor Field Effect Transistor", [national] International Review of physics(IREPHY) , Praise Worthy Prize S.r.l.

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2008

Quasi One Dimensional Simulation of Heterojunction FET

Quasi One Dimensional Simulation of Heterojunction FET
Citation

M. KEBAILI Farida, O. El Mansouri,, , (2008), "Quasi One Dimensional Simulation of Heterojunction FET", [national] African Physical Review , ON LINE

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2006

Modelling and Characterization of GaAs MESFET

The development of low noise amplifiers and receivers for communication components that can operate also at high frequencies and present decreasing geometric sizes, the field effect transistors are the solution. The FETs modeling is one of the preoccupations of certain researchers to understand some phenomenon of this component. Our work consists essentially of improving the implementation of an analytical model called PHS (Pucel, Hauss and statz). This model allows us to describe the variation of the basic elements of the equivalent schema in small signal with the gate and drain voltage using different simplified hypotheses. To produce the characteristics evolution, we need introduce the first region’s length. For this, we have brought a personnel idea based on the discretization of the channel and establish a test to define the channel’s pinching. To validate the model we performed a simulation which permitted us to obtain the principal functional characteristics of the MESFET as the variation of the drain currant versus the drain voltage for several values of the gate voltage. We notice that, the current is linear with the drain source voltage until the saturation value, where it becomes steady. So we have two areas: linear and saturation. We obtained the current’s maximum for null value of the gate source voltage.

-The trans-conductance increases with the diminution of the gate source voltage. -The conductance decreases with the augmentation of the drain voltage. Its maximum is in the linear region. -The capacitance is in the fF class. It becomes almost steady for important absolutes values of the gate voltage.

To validate these results we have conducted two kinds of comparison: The first one is a comparison with a reference model. We observe that the results are nearly similar. The second comparison is done with the experiment. So that the curves are comparable. We notice a significant divergence,
Citation

M. KEBAILI Farida, (2006), "Modelling and Characterization of GaAs MESFET", [international] International conference on micro and nano technologies(ICMNT) , tizi ouzou

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2005

physical properties in MESFET's using the PHS model

We present in this paper an analytical model of the current-voltage (I-V) characteristics for submicron GaAs MESFET transistors. We propose in this frame work an algorithm of simulation based on mathematical expressions obtained previously. The predictions of the simulator are compared with the experimental data [1] and have been shown to be good
Citation

M. KEBAILI Farida, (2005), "physical properties in MESFET's using the PHS model", [international] international conference on modeling and simulation , MARRAKECH

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