M. MEZRAG Fadila

Prof

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Department

Departement of Agricultural sciences

Research Interests

physique de la matière condensée, semiconducteurs, simulation numérique, biophysique,nanomatériaux, mécanique de fluide,communication de données

Contact Info

University of M'Sila, Algeria

Email : fadila.mezrag@univ-msila.dz

On the Web:

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Recent Publications

2024-11-09

DFT analysis of the physical characteristics of lead-free halide double perovskites.

Lead-free halide double perovskite materials have recently attracted considerable interest from the scientific community due to their vast potential in optoelectronic applications without toxicity issues. In this research, the physical properties of double halide perovskites (DP) were theoretically analyzed using the full-potential linearized augmented plane wave (FPLAPW) approach within the framework of density functional theory (DFT). The generalized gradient approximation (GGA) was utilized to compute key physical properties. The stability of both perovskites was confirmed through volume optimization curves and corresponding formation energies. Furthermore, electronic properties were assessed, and the band gap was determined. The results reveal semiconducting behavior with a direct band gap of 2.6 eV, suggesting its potential for solar cell applications.
Citation

M. MEZRAG Fadila, (2024-11-09), "DFT analysis of the physical characteristics of lead-free halide double perovskites.", [international] The 1st International Conference of Materials Engineering and Renewable Energy (I C M E R E 2024) , University May 8, 1945 Guelma Algeria Faculty of Science and Technology Department of Mechanical Engineering

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2024-11-06

Double-Perovskite Halide Semiconductors for Photovoltaic Use.

Lead-free halide double perovskites have recently drawn significant interest for their promising optoelectronic properties and non-toxic nature. This study conducted a theoretical investigation of their physical properties using the full-potential linearized augmented plane wave (FPLAPW) method within the density functional theory (DFT) framework. The generalized gradient approximation (GGA) was employed to compute essential physical attributes. Stability was confirmed through volume optimization and formation energy calculations. The analysis of electronic properties revealed a direct band gap of 2.6 eV, suggesting semiconducting behavior and strong potential for solar cell applications.

Keywords: Double halide perovskites; structural properties; electronic properties.
Citation

M. MEZRAG Fadila, (2024-11-06), "Double-Perovskite Halide Semiconductors for Photovoltaic Use.", [national] The First National Conference on Mechanical Engineering , Univ: Constantine 1- Frères Mentouri University ,Institute of Sciences and Applied Techniques_Department of Mechanics / Department of Electromechanics

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2024-10-11

Study of the structural and electronic properties of double perovskites for energy applications

The potential of halide perovskites has transformed the field of optoelectronics and energy conversion. In this study, the physical properties of double halide perovskites (DP) were investigated theoretically using the full-potential linearized augmented plane wave (FPLAPW) method within the framework of DFT. The generalized gradient approximation (GGA) was employed to calculate relevant physical characteristics. Stability for both perovskites was verified through volume optimization curves and corresponding formation energies. Additionally, electronic properties were examined, and band-gap were calculated. The findings indicate a semiconducting behavior with a direct band-gap of 2.6 eV, highlighting its potential for solar cell applications.
Citation

M. MEZRAG Fadila, (2024-10-11), "Study of the structural and electronic properties of double perovskites for energy applications", [international] JSI'2024 - International Conference on Engineering Sciences 11ème Édition des Journées des Sciences de L’Ingénieur , University of Sfax, National School of Engineers of Sfax (ENIS), Tunisia.

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2024-05-07

Energy band Gaps in Nanostructured II-VI Semiconductors: The Effect of Quantum Confinement

In the zinc-blende phase, spherical II-VI semiconductor nanostructured (MgSe, CdTe, ZnS, ZnSe, and ZnTe) are investigated for the effects of quantum confinement on their energy band gaps. Using the empirical pseudopotential method, the study focuses at the relationship between the network parameter and the quantum dot size and how it impacts the direct and indirect energy band  gaps. The findings demonstrate that, in comparison to what can be observed in bulk materials, quantum confinement leads to a fundamental energy gap that is quite larger. Essentially, this work highlights the impact of quantum confinement on the electronic properties of semiconductor quantum dots and their potential for various technological applications.
Keywords: Band gap energy, II-VI semiconductors, Quantum dots.
Citation

M. MEZRAG Fadila, (2024-05-07), "Energy band Gaps in Nanostructured II-VI Semiconductors: The Effect of Quantum Confinement", [national] 2ème colloque nationale de chimie (CNC2@2024) 06 - 07 Mai 2024 SCIENCE AND ENGINEERING , M'sila

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