M. ELBAHI Zouina

MAA

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Department

Informatics Department

Research Interests

PHYSIQUE

Contact Info

University of M'Sila, Algeria

Email : zouina.elbahi@univ-msila.dz

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Recent Publications

2025-02-17

Exploring Quantum Dot Size Effects on Electronic and Optical Properties

The electronic and optical properties of II-VI semiconductor quantum dots are examined using a pseudopotential approach, focusing on how these properties depend on quantum dot size. Quantum dot radii are varied from 1 to 10 nm to study the size effect. Results reveal a nonlinear decrease in both direct and indirect band gaps, as well as electron and hole effective masses, as the quantum dot radius increases. Conversely, the refractive index, static and high-frequency dielectric constants, and transverse effective charge exhibit an increasing trend with larger quantum dot sizes. Quantum confinement significantly influences these properties when the quantum dot radius is less than 5 nm, highlighting its critical role in shaping physical characteristics at reduced dimensions. These findings provide a pathway to customize the electronic and optical properties of the material for specific applications.
Citation

M. ELBAHI Zouina, (2025-02-17), "Exploring Quantum Dot Size Effects on Electronic and Optical Properties", [national] The 2ⁿᵈ National Seminar of Physics, Chemistry and their Applications NSPCA' 25 , University of Bordj Bou Arreridj

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2024-12-23

ELECTRONIC AND OPTICAL INSIGHTS OF InSb QUANTUM DOTS FROM PSEUDOPOTENTIAL CALCULATION

Indium Antimonide (InSb) quantum dots (QDs) are nanoscale semiconductor particles that exhibit unique optical and electronic properties due to the quantum confinement effect. InSb QDs show promise for highly sensitive and efficient detection of infrared radiation. They can be used to fabricate tunable infrared lasers and to enhance photovoltaïc conversion efficiency by absorbing a wider range of the solar spectrum. Furthermore, their strong IR absorption and emission properties could be utilized for in vivo imaging and diagnostics. In the present contribution, the electronic and optical properties of InSb spherical quantum dots were investigated using a pseudopotential approach within a radius range of 1-10 nm. As the quantum dot radius increases, both direct and indirect bandgaps, along with electron and heavy-hole effective masses, exhibit a decrease. Conversely, refractive index increases with increasing quantum dot radius. Notably, quantum confinement significantly influences all studied properties for quantum dot radii below 6 nm. This strong quantum confinement effect offers the potential to engineer novel optoelectronic properties in InSb quantum dots that are unattainable in bulk InSb.
Citation

M. ELBAHI Zouina, (2024-12-23), "ELECTRONIC AND OPTICAL INSIGHTS OF InSb QUANTUM DOTS FROM PSEUDOPOTENTIAL CALCULATION", [international] 5TH INTERNATIONAL CONFERENCE AND ACADEMIC RESEARCH ICSAR 2024 , KONYA TURKEY

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2024-11-06

SnO2/SiO2/Si solar cell performance dependence on the interface states and the silica layer thickness

The solar cell Metal Insulator Semiconuctor (MIS) SnO2/SiO2/Si where tin dioxide (SnO2) acts as the metal were studied. The silica layer (SiO2) is the insulator, and Si is the semiconductor considered here to be of N-type. The effect of the density of the interface states mainly on the open circuit voltage and on the energy conversion efficiency, as well as the optimal thickness of the silica layer corresponding to the best conversion efficiency were investigated. Both the open circuit voltage and the conversion efficiency are altered as the interface states density increases. This is because of the reduction of the number of free carrers which are trapped by the interface states. The silica optimal thickness were determined to be equal to 19.8 Å. This corresponds to a conversion efficiency of 16.15%. The information derived from the present study can be useful for experimentalists to fabricate the studied MIS solar cell. This permits to reduce both the time and the cost of the experiments.
Citation

M. ELBAHI Zouina, (2024-11-06), "SnO2/SiO2/Si solar cell performance dependence on the interface states and the silica layer thickness", [national] STUDIES IN ENGINEERING AND EXACT SCIENCES , studies publicações

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2024-05-08

Electronic and optical properties of MgTe quantum dots: size effect

The size-dependent electronic and optical properties of magnesium telluride quantum dots are investigated using a pseudopotential scheme. The emphasis is focused on
the effect of the size of the quantum dots on the undertaken properties. The quantum dot radius is considered to be varying in between 1 and 10 nm. It is found that the
direct- and indirect band gaps as well as the electron and hole effective masses decrease non-linearly as the quantum dot radius is increased. However, the refractive
index, the static- and high frequency dielectric as well as the transverse effective charge increase as the quantum dot size is augmented. The quantum confinement is
found to play a major role for the studied physical quantities as long as the quantum ot radius remains less than 5 nm. This permits to tailor the electronic and optica properties of our material according to the desired application.
Citation

M. ELBAHI Zouina, (2024-05-08), "Electronic and optical properties of MgTe quantum dots: size effect", [national] Studies in Engineering and Exact Sciences , Studies Publicações

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