M. BECHANE Leila

MCB

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Department

Departement of MECHANICAL ENGINEERING

Research Interests

Cellules photovoltaiques

Contact Info

University of M'Sila, Algeria

Email : leila.bechane@univ-msila.dz

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Recent Publications

2024-07-16

Simulation of SnO2/Cs2AgInBr6/CuO heterojunction solar cell using AMPS-1D modeling

ABSTRACT
Using the one-dimensional computer code AMPS-1D MPS-1D (Analysis of
Microelectronic and Photonic Structures), we simulated a lead-free double
perovskite cell made of Cs2AgInBr6. This study examines the influence of the
thickness and acceptor density of the active layer (Cs2AgInBr6) on key solar cell
parameters, including short-circuit current density (JSC), efficiency (Eff), fill factor
(FF), open-circuit voltage (VOC), current-voltage characteristics (J-V)). Our results
suggest that an optimal active layer thickness of 500 nm yields good performance
for the studied solar cell. Furthermore, the ideal acceptor density for enhancing
output parameters is in the range of 10¹3-10¹⁵ cm⁻³. Post-optimization, our findings
reveal a Voc of 0.969 V, a Jsc of 29.402 mA cm⁻², and an FF of 0.876, resulting in
an efficiency of 24.959%. The results from AMPS-1D simulations for a Cs2AgInBr6
lead-free double perovskite solar cell suggest that this material and device
structure can achieve high efficiency and good performance characteristics.
Keywords: AMPS-1D. Cs2AgInBr6 Solar Cells. Hetero-Junction. SnO2. CuO.
Efficiency.
Citation

M. BECHANE Leila, (2024-07-16), "Simulation of SnO2/Cs2AgInBr6/CuO heterojunction solar cell using AMPS-1D modeling", [national] Studies in Engineering and Exact , Bechane leila

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2023-11-15

Comparative study of (CdS/CIGS) and (ZnSe/CIGS) heterojunction solar cells Using AMPS-1D software.

Abstract. In this paper, we presented a simulation study of Cu (In, Ga) Se2 (CIGS) photovoltaic cell,
using the one-dimensional calculation code AMPS-1D (One Dimensional Analysis of Microelectronic
and Photonic Structures). Two types of cells are simulated; each one with a different buffer layer:
ZnSe or Cds. We have studied the effect of the thickness of : the absorber layers: CIGS (Cu (In, Ga)
Se2), and the buffer layer (Cds or ZnSe). The current-voltage characteristic (J-V), the electrical
parameters (Jsc; Eff; FF; Voc) and the external optical efficiency EQE (λ) are deduced.
The bestperforming cell found was the simulated one with the ZnSe layer, where its absorber layer thickness
was chosen: w=2 μm, given an efficiency of 23.366 %, with: JSC = 36.808 mA/cm2, FF = 0.842 and
VOC = 0.754 V.
The ZnSe buffer layer is a good alternative buffer layer to replace Cds, with a high-bandgap buffer
layer to achieve better JSC, where the same stability is realized as traditional Cds buffer layer
photovoltaic cells.
Keywords: Simulation by AMPS-1D, CIGS PV Cell, ZnSe, Cds.
Citation

M. BECHANE Leila, (2023-11-15), "Comparative study of (CdS/CIGS) and (ZnSe/CIGS) heterojunction solar cells Using AMPS-1D software.", [international] First International Congress of Mechanical Engineering (ICME23). , l'université de Constantine, Algeria.

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2023-11-06

Numerical optimization of (FTO/ZnO/Cs2AgBiBr6/P3HT/MO) perovskite solar cell”.

A non-toxic, lead-free double-perovskite solar cell
(Cs2AgBiBr6) is simulated using the one-dimensional
computer code AMPS-1D. The aim of the present
contribution is to study the effect of active layer thickness
(Cs2AgBiBr6i) on solar cell performance, namely: shortcircuit current (JSC), open-circuit voltage (VOC), form
factor (FF) and efficiency (Eff). We also seek to
determine the structural parameters characterizing of
each layer making up the cell. The best active layer
thickness for the solar cell is between 600 and 800 nm.
Our optimization gave an optimum thickness of 600 nm,
where: Voc= 0.857V, Jsc = 15.983mA/cm2 and FF=
0.772, which correspond to an efficiency of Eff =
10.567%.
KEY WORDS: AMPS-1D; Cs2AgBiBr6 solar cells;
Active layer; Efficiency of perovskite cells.A non-toxic, lead-free double-perovskite solar cell
(Cs2AgBiBr6) is simulated using the one-dimensional
computer code AMPS-1D. The aim of the present
contribution is to study the effect of active layer thickness
(Cs2AgBiBr6i) on solar cell performance, namely: shortcircuit current (JSC), open-circuit voltage (VOC), form
factor (FF) and efficiency (Eff). We also seek to
determine the structural parameters characterizing of
each layer making up the cell. The best active layer
thickness for the solar cell is between 600 and 800 nm.
Our optimization gave an optimum thickness of 600 nm,
where: Voc= 0.857V, Jsc = 15.983mA/cm2 and FF=
0.772, which correspond to an efficiency of Eff =
10.567%.
KEY WORDS: AMPS-1D; Cs2AgBiBr6 solar cells;
Active layer; Efficiency of perovskite cells.
Citation

M. BECHANE Leila, (2023-11-06), "Numerical optimization of (FTO/ZnO/Cs2AgBiBr6/P3HT/MO) perovskite solar cell”.", [international] 4th International Conference on Mechanics and Materials (ICMM2023) , Ferhat Abbas University Setif 1, Algeria.

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2022-12-21

Optimization of Photovoltaic Conversion Yield of Cells Solar Hetero junction a-Si :H /c-Si

Abstract: A hetero junction solar cell of the HIT type based on silicon, crystalline silicon and amorphous silicon
(a-Si:H(p)/c-si(i)/a-Si:H(n)) was simulated, using the one-dimensional computer code AMPS-1D (One Dimensional Analysis of
Microelectronic and Photonic Structures). On the one hand, our objective is to determine the effect of the thickness of the active layer
(c-Si), as well as the variation of the concentration of the donors (Nd) of this layer on the performances of the cell: the short-circuit
current (JSC), the open-circuit voltage (VOC), the form factor (FF) and the efficiency (Eff), and on the other hand, to find all the
structural parameters characterizing each constituent layer of the cell. The results obtained from the optimization are shown in the
following figure. We have found that the best thickness for the active layer that gives good performances of the studied solar cell, lies
between 100 and 300 micro. Besides, the best value of Nd that provides better output parameters in the range of 5.1015 – 1016cm-3. In
our optimization which has been done depending of temperature and wavelength, we have gotten those values of Voc= 0.795 V, Jsc=
38.599 mA/cm2 and FF= 0.800 corresponding to an efficiency of Eff=27.472%.
Keywords: AMPS-1D, solar cells, C-Si solar cells, HIT, Active layer, Efficiency.
Citation

M. BECHANE Leila, (2022-12-21), "Optimization of Photovoltaic Conversion Yield of Cells Solar Hetero junction a-Si :H /c-Si", [international] International Conference on Mechanics and Energy Hammamet, TUNISIA , TUNISIA (ICME'2022-122)

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2021

Numerical Simulation and Optimization of the Performances of a Solar Cell (p-i-n) Containing Amorphous Silicon Using AMPS-1D

A solar cell of p-i-n type, containing hydrogenated amorphous silicon (a-Si:H) is simulated using the unidimensional computer code AMPS-1D. The objective of the present contribution is to investigate the effect of the thickness of the active layer a-Si:H(i) and the variation of its density of states (DOS) on the performances of the solar cell, namely the current of short circuit (JSC), the tension of open circuit (VOC), the form factor (FF) and the efficiency (Eff). Also we aim to determine the structural parameters characterizing each layer constituting the cell. Our results show that the best thickness for the active layer that gives good performances of the studied solar cell lies between 300 and 600 nm. Besides, the best DOS that provides better output parameters of the solar cell is determined to be in the range 5.1015–1016 cm−3. After optimization, our findings give values of Voc = 1.193 V, Jsc = 13.145 mA cm−2, FF = 0.807 which corresponds to an efficiency of Eff = 12.655%. The optimization has been done as a function of temperature and wavelength.
Citation

M. BECHANE Leila, Loucif Kamel, , (2021), "Numerical Simulation and Optimization of the Performances of a Solar Cell (p-i-n) Containing Amorphous Silicon Using AMPS-1D", [national] Transactions on Electrical and Electronic Materials , Springer link

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2020-03-09

Optimisation du rendement de conversion photovoltaïque des cellules solaires à hétérojonction GaAs/c-Si

Résumé :

Aux cours de ces dernières années, des améliorations considérables concernant les performances des cellules solaires ont permis d’aboutir à des rendements de conversion photovoltaïque respectivement de 28 %[1] et de 26 % pour des cellules solaires à base d’arsenic de gallium et de silicium cristallin, sous la condition d’éclairement d'un soleil.

Une cellule solaire hétérojonction [2] de type p-GaAs/i-GaAs/n-Sicri/i-GaAs/n-GaAs, à base de silicium cristallin (c-si) et de galium d’arsenic a été simulée, en utilisant le code de calcul unidimensionnel AMPS-1D (One Dimensional Analysis of Microelectronic and Photonic Structures) [3].
D'un côté, notre objectif était de déterminer l'effet de l'épaisseur de la couche active, ainsi que la variation de la concentration de donneurs (Nd) de cette couche, sur les performances de la cellule, à savoir, le courant de court-circuit (JSC), la tension de circuit ouvert (VOC), le facteur de forme (FF) et l'efficacité (Eff). D'un autre coté et de trouver l'ensemble des paramètres structurels caractérisant chaque couche constituant la cellule. Les résultats obtenues après optimisation sont: Jsc= 39.036mA/cm2; FF= 0.800 ; Voc= 0.889 et le rendement de conversion énergétique est Eff =27.756%.

Mots Clés: Cellule solaire, c-Si, GaAs, AMPS-1D.
Citation

M. BECHANE Leila, (2020-03-09), "Optimisation du rendement de conversion photovoltaïque des cellules solaires à hétérojonction GaAs/c-Si", [national] Conférence nationale sur la transition énergétique en Algérie (CNTEA1-2020) , l’Université Mohamed Boudiaf, M’sila, Algérie.,

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